Unconventional Strain Relaxation of Sb2Te3 Grown on a GeTe/Sb2Te3/GeTe Heterostructure on Si(111)

Cecchi, S; Wang, RN; Zallo, E; Calarco, R

Cecchi, S (reprint author), Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany.

NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2017; 9 (7): 1114

Abstract

The epitaxy of antimony telluride (Sb2Te3) has been successfully realized on Si(111) substrates as well as on graphene. It has been also employed in m......

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