Arsenic Precipitation in Heavily Arsenic-Doped Czochralski Silicon

Wu, DF; Zhao, T; Ye, B; Liang, XB; Chen, H; Nie, QL; Tian, DX; Yang, DR; Ma, XY

Ma, XY (通讯作者)，Zhejang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China.;Ma, XY (通讯作者)，Zhejang Univ, Sch Mat Sci & Engn, Hangzhou 310027, Peoples R China.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023; 17 (3):

Abstract

Heavily arsenic-doped Czochralski (HAs-CZ) silicon is an important substrate material for manufacturing power electronic devices. The arsenic impuriti......

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