Record > 10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates-MedSci.cn

Record > 10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

Khachariya, D; Mita, S; Reddy, P; Dangi, S; Dycus, JH; Bagheri, P; Breckenridge, MH; Sengupta, R; Rathkanthiwar, S; Kirste, R; Kohn, E; Sitar, Z; Collazo, R; Pavlidis, S

Pavlidis, S (通讯作者)，North Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA.

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Record > 10 MV/cm mesa breakdown fields in Al0.85Ga0.15N/Al0.6Ga0.4N high electron mobility transistors on native AlN substrates

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