Ultralow Power Loss Integratable High-voltage MOSFETs

Luo, XR; Ge, WW; Zhang, B

Zhang, B (reprint author), Univ Elect Sci & Technol China, Chengdu 610051, Sichuan, Peoples R China.

2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2017; ( ): 468

Abstract

Optimizing the trade-off relationship between the Breakdown Voltage (BV) and specific on-resistance (R-on,R-sp) is the main concern for power MOSFETs.......

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