期刊： MICROELECTRONICS INTERNATIONAL, 2020; 37 (4)
Purpose This paper aims to perform experimental test on fatigue characteristics of package on package (POP) stacked chip assembly under thermal cyclin......
期刊： MICROELECTRONICS INTERNATIONAL, 2020; 37 (3)
Purpose The emulation of synapses is essential to neuromorphic computing systems. Despite remarkable progress has been made in the two-terminal device......
期刊： MICROELECTRONICS INTERNATIONAL, 2020; 37 (3)
Purpose This paper aims to assess precise correlations between intermetallic compounds (IMCs) microstructure evolutions and the reliability of micro-j......
期刊： MICROELECTRONICS INTERNATIONAL, 2020; 37 (3)
Purpose This paper aims to study a high-temperature (up to 200 degrees C) data acquisition and processing circuit for logging. Design/methodology/appr......
期刊： MICROELECTRONICS INTERNATIONAL, 2019; 36 (4)
Purpose The purpose of this paper is to investigate the nanoscale electric performance of NiO thin films in grain boundary and grain face. Design/meth......
期刊： MICROELECTRONICS INTERNATIONAL, 2019; 36 (1)
Purpose Aluminum nitride (AlN) ceramics are suitable substrate and package materials for high-power integrated circuits. Design/methodology/approach D......
期刊： MICROELECTRONICS INTERNATIONAL, 2018; 35 (4)
Purpose - The purpose of this paper is to demonstrate a novel 3D system-in-package (SiP) approach. This new packaging approach is based on stacked sil......
期刊： MICROELECTRONICS INTERNATIONAL, 2018; 35 (4)
Purpose - The purpose of this paper is to find an effective route to fabricate high transparent top electrode in quantum dots light-emitting diodes (Q......
期刊： MICROELECTRONICS INTERNATIONAL, 2018; 35 (4)
Purpose - The purpose of this paper is to investigate a light-trapping structure based on Ag nanograting for amorphous silicon (a-Si) thin-film solar ......
期刊： MICROELECTRONICS INTERNATIONAL, 2018; 35 (1)
Purpose - The purpose of this paper is to investigate the optoelectronic properties of the multichannel ZnO UV photodetectors. Design/methodology/appr......
期刊： MICROELECTRONICS INTERNATIONAL, 2018; 35 (2)
Purpose - The design and performance of X-band high power 3-bit phase shifter which has been fabricated in 0.25 mu m GaN HEMT technology are presented......
